IRFS4321-7PPBF 1 www.irf.com ? 2013 international rectifier june 14, 2013 hexfet ? power mosfet d s g d 2 pak 7pin g d s gate drain source application ? ? motion control applications ? ? high efficiency synchronous rectification in smps ? ? uninterruptible power supply ? ? hard switched and high frequency circuits benefits ? ? low rdson reduces losses ? ? low gate charge improves the switching performance ? ? improved diode recovery improves switching & emi performance ? ? 30v gate voltage rating improves robustness ? ? fully characterized avalanche soa v dss 150v r ds(on) typ. 11.7m ? ? max 14.7m ? ? i d 86a parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 86 a i d @ t c = 100c continuous drain current, v gs @ 10v 61 i dm pulsed drain current ?? 343 p d @t c = 25c maximum power dissipation 350 w linear derating factor 2.3 w/c v gs gate-to-source voltage 30 v e as (thermally limited) single pulse avalanche energy ?? 120 mj t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 thermal resistance ? parameter typ. max. units r ? jc junction-to-case ?? CCC 0.43* c/w r ? ja junction-to-ambient ? CCC 40 ? ? base part number package type standard pack orderable part number form quantity IRFS4321-7PPBF d 2 pak-7pin tube 50 IRFS4321-7PPBF tape and reel left 800 irfs4321trl7pp ?? r ? jc (end of life) for d2pak and to-262 = 0.65c/w. this is the maximum measured value after 1000 temperature cycles from -55 to 150c and is accounted for by the physical wear out of the die attach medium. notes ?? through ? are on page 2 downloaded from: http:///
? IRFS4321-7PPBF 2 www.irf.com ? 2013 international rectifier june 14, 2013 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 150 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 150 CCC mv/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC 11.7 14.7 m ?? v gs = 10v, i d = 34a ?? v gs(th) gate threshold voltage 3.0 CCC 5.0 v v ds = v gs , i d = 250a i dss drain-to-source leakage current CCC CCC 20 a v ds =150 v, v gs = 0v CCC CCC 1.0 ma ? v ds =150v,v gs = 0v,t j =125c i gss gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v r g(int) internal gate resistance CCC 0.8 CCC ?? dynamic electrical characteristics @ t j = 25c (unless otherwise specified) gfs forward transconductance 130 CCC CCC s v ds = 25v, i d =50a q g total gate charge CCC 71 110 nc ? i d = 50a q gs gate-to-source charge CCC 24 v ds = 75v q gd gate-to-drain (miller ) charge CCC 21 v gs = 10v ? t d(on) turn-on delay time CCC 18 CCC ns v dd = 98v t r rise time CCC 60 CCC i d = 50a t d(off) turn-off delay time CCC 25 CCC r g = 2.5 ?? t f fall time CCC 35 CCC v gs = 10v ? c iss input capacitance CCC 4460 CCC ? v gs = 0v c oss output capacitance CCC 390 CCC pf ? v ds = 50v c rss reverse transfer capacitance CCC 82 CCC ? ? = 1.0mhz diode characteristics ? parameter min. typ. max. units conditions i s continuous source current CCC CCC 86 a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 343 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c,i s = 50a,v gs = 0v ?? t rr reverse recovery time CCC 89 130 ns i f = 50a, q rr reverse recovery charge CCC 300 450 nc v dd = 128v ? i rrm reverse recovery current CCC 6.5 CCC a di/dt = 100a/s ??? d s g notes: ? ? repetitive rating; pulse width limit ed by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 0.096mh, r g = 25 ? , i as = 50a, v gs =10v. part not recommended for use above this value. ? pulse width ?? 400s; duty cycle ? 2%. ? r ?? is measured at t j approximately 90c downloaded from: http:///
? IRFS4321-7PPBF 3 www.irf.com ? 2013 international rectifier june 14, 2013 fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 25c 5.0v vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 175c 5.0v vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 3.0 4.0 5.0 6.0 7.0 8.0 9.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ? ? ) v ds = 25v ? 60s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 6000 7000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 120 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 120v vds= 75v vds= 30v i d = 50a downloaded from: http:///
? IRFS4321-7PPBF 4 www.irf.com ? 2013 international rectifier june 14, 2013 fig 8. maximum safe operating area fig 11. typical c oss stored energy fig 12. maximum avalanche energy vs. drain current fig 7. typical source-drain diode forward voltage 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 13a 20a bottom 50a fig 10. drain-toCsource breakdown voltage 0 20 40 60 80 100 120 140 160 v ds, drain-to-source voltage (v) 0.0 1.0 2.0 3.0 4.0 5.0 e n e r g y ( j ) fig 9. maximum drain current vs. case temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a in c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 140 150 160 170 180 190 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 50 60 70 80 90 i d , d r a i n c u r r e n t ( a ) downloaded from: http:///
? IRFS4321-7PPBF 5 www.irf.com ? 2013 international rectifier june 14, 2013 fig 13. maximum effective transient thermal impedance, junction-to-case fig 14. typical avalanche current vs. pulse width fig 15. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ??? (sec) 0.085239 0.000052 0.18817 0.00098 0.176912 0.008365 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ? ? c ci= ? i ? ri ci= ? i ? ri 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 50a downloaded from: http:///
? IRFS4321-7PPBF 6 www.irf.com ? 2013 international rectifier june 14, 2013 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 400 800 1200 1600 2000 2400 2800 3200 q r r - ( n c ) i f = 50a v r = 128v t j = 125c t j = 25c fig 19. typical stored charge vs. dif/dt fig 20. typical stored charge vs. dif/dt fig 17. typical recovery current vs. dif/dt 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 10 20 30 40 i r r m - ( a ) i f = 50a v r = 128v t j = 125c t j = 25c fig 16. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 2.0 3.0 4.0 5.0 6.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a i d = 1.0ma i d = 250a 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 10 20 30 40 i r r m - ( a ) i f = 33a v r = 128v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 400 800 1200 1600 2000 2400 2800 3200 q r r - ( n c ) i f = 33a v r = 128v t j = 125c t j = 25c fig 18. typical recovery current vs. dif/dt downloaded from: http:///
? IRFS4321-7PPBF 7 www.irf.com ? 2013 international rectifier june 14, 2013 fig 21. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 22a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 23a. switching time test circuit fig 24a. gate charge test circuit t p v (br)dss i as fig 22b. unclamped inductive waveforms fig 23b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 24b. gate charge waveform downloaded from: http:///
? IRFS4321-7PPBF 8 www.irf.com ? 2013 international rectifier june 14, 2013 d 2 pak-7pin package outline (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
? IRFS4321-7PPBF 9 www.irf.com ? 2013 international rectifier june 14, 2013 d 2 pak-7pin part marking information d2pak-7pin tape and reel note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
? IRFS4321-7PPBF 10 www.irf.com ? 2013 international rectifier june 14, 2013 ? qualification standards can be found at international rectifiers web site : http://www.irf.com/p roduct-info/reliability/ ?? applicable version of jedec standar d at the time of product release. ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level d 2 pak-7pin msl1 rohs compliant yes downloaded from: http:///
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